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BS107ARL1G
- Varenummer:
- BS107ARL1G
- Fabrikant:
- AMI Semiconductor / ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 200V 0.25A TO-92
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19453 Pieces
- Datablad:
- BS107ARL1G.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for BS107ARL1G, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til BS107ARL1G via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3V @ 1mA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-92-3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 6.4 Ohm @ 250mA, 10V |
| Power Dissipation (Max): | 350mW (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Andre navne: | BS107ARL1GOSTR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | BS107ARL1G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 60pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 200V 250mA (Ta) 350mW (Ta) Through Hole TO-92-3 |
| Afløb til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 0.25A TO-92 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 250mA (Ta) |
| Email: | [email protected] |
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