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BSC12DN20NS3 G
- Varenummer:
- BSC12DN20NS3 G
- Beskrivelse:
- MOSFET N-CH 200V 11.3A 8TDSON
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12993 Pieces
- Datablad:
- BSC12DN20NS3 G.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for BSC12DN20NS3 G, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til BSC12DN20NS3 G via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 25µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TDSON-8 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 125 mOhm @ 5.7A, 10V |
| Power Dissipation (Max): | 50W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-PowerTDFN |
| Andre navne: | BSC12DN20NS3G BSC12DN20NS3GATMA1 BSC12DN20NS3GTR SP000781774 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | BSC12DN20NS3 G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 680pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.7nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 200V 11.3A (Tc) 50W (Tc) Surface Mount PG-TDSON-8 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 11.3A 8TDSON |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11.3A (Tc) |
| Email: | [email protected] |
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