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DMN10H099SFG-13
- Varenummer:
- DMN10H099SFG-13
- Fabrikant:
- Diodes Incorporated
- Beskrivelse:
- MOSFET N-CH 100V 4.2A
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12474 Pieces
- Datablad:
- DMN10H099SFG-13.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PowerDI3333-8 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 80 mOhm @ 3.3A, 10V |
| Power Dissipation (Max): | 980mW (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-PowerWDFN |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | DMN10H099SFG-13 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1172pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 25.2nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 4.2A (Ta) 980mW (Ta) Surface Mount PowerDI3333-8 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 4.2A |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4.2A (Ta) |
| Email: | [email protected] |
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