Købe DMN2013UFDE-7 med BYCHPS
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DMN2013UFDE-7
- Varenummer:
- DMN2013UFDE-7
- Fabrikant:
- Diodes Incorporated
- Beskrivelse:
- MOSFET N-CH 20V 10.5A U-DFN
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18054 Pieces
- Datablad:
- DMN2013UFDE-7.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for DMN2013UFDE-7, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til DMN2013UFDE-7 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 1.1V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | U-DFN2020-6 (Type E) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 8.5A, 4.5V |
| Power Dissipation (Max): | 660mW (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 6-UDFN Exposed Pad |
| Andre navne: | DMN2013UFDE-7DITR DMN2013UFDE7 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 16 Weeks |
| Producentens varenummer: | DMN2013UFDE-7 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2453pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 25.8nC @ 8V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 20V 10.5A (Ta) 660mW (Ta) Surface Mount U-DFN2020-6 (Type E) |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N-CH 20V 10.5A U-DFN |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 10.5A (Ta) |
| Email: | [email protected] |
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