Købe DMN2300UFB-7B med BYCHPS
Køb med garanti
DMN2300UFB-7B
- Varenummer:
- DMN2300UFB-7B
- Fabrikant:
- Diodes Incorporated
- Beskrivelse:
- MOSFET N-CH 20V 1.32A 3DFN
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17342 Pieces
- Datablad:
- DMN2300UFB-7B.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for DMN2300UFB-7B, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til DMN2300UFB-7B via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 950mV @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | X1-DFN1006-3 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 175 mOhm @ 300mA, 4.5V |
| Power Dissipation (Max): | 468mW (Ta) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 3-UFDFN |
| Andre navne: | DMN2300UFB-7BDI |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | DMN2300UFB-7B |
| Inputkapacitans (Ciss) (Max) @ Vds: | 67.62pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.89nC @ 4.5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 20V 1.32A (Ta) 468mW (Ta) Surface Mount X1-DFN1006-3 |
| Afløb til Source Voltage (VDSS): | 20V |
| Beskrivelse: | MOSFET N-CH 20V 1.32A 3DFN |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 1.32A (Ta) |
| Email: | [email protected] |
Relaterede dele til DMN2300UFB-7B
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
SPD50N03S207GBTMA1 | Infineon Technologies | MOSFET N-CH 30V 50A TO252-3 | Forespørgsel |
 |
DMN2320UFB4-7B | Diodes Incorporated | MOSFET N-CH 20V X2-DFN1006-3 | Forespørgsel |
 |
DMN2300UFD-7 | Diodes Incorporated | MOSFET N-CH 20V 1.73A 3UDFN | Forespørgsel |
 |
DMN2300UFL4-7 | Diodes Incorporated | MOSFET 2N-CH 20V 2.11A 6DFN | Forespørgsel |
|
DMN2300UFB4-7B | Diodes Incorporated | MOSFET N-CH 20V 1.3A 3DFN | Forespørgsel |
 |
DMN2300U-7 | Diodes Incorporated | MOSFET N-CH 20V 1.24A SOT23 | Forespørgsel |
 |
IRF7701GTRPBF | Infineon Technologies | MOSFET P-CH 12V 10A 8-TSSOP | Forespørgsel |
|
IRF7705GTRPBF | Infineon Technologies | MOSFET P-CH 30V 8A 8-TSSOP | Forespørgsel |
 |
2SK3403(Q) | Toshiba Semiconductor and Storage | MOSFET N-CH 450V 13A TO220FL | Forespørgsel |
 |
SIS415DNT-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 35A 1212-8 | Forespørgsel |
 |
FCA22N60N | Fairchild/ON Semiconductor | MOSFET N-CH 600V 22A TO-3PN | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog