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EMD29T2R
- Varenummer:
- EMD29T2R
- Fabrikant:
- LAPIS Semiconductor
- Beskrivelse:
- TRANS NPN/PNP PREBIAS 0.12W EMT6
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12030 Pieces
- Datablad:
- EMD29T2R.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for EMD29T2R, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til EMD29T2R via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 50V, 12V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA / 300mV @ 5mA, 100mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Leverandør Device Package: | EMT6 |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | 10k |
| Modstand - Base (R1) (Ohms): | 1k, 10k |
| Strøm - Max: | 120mW |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | SOT-563, SOT-666 |
| Andre navne: | EMD29T2R-ND EMD29T2RTR Q3614586 |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | EMD29T2R |
| Frekvens - Overgang: | 250MHz, 260MHz |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V, 12V 100mA, 500mA 250MHz, 260MHz 120mW Surface Mount EMT6 |
| Beskrivelse: | TRANS NPN/PNP PREBIAS 0.12W EMT6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 5mA, 5V / 140 @ 100mA, 2V |
| Nuværende - Collector Cutoff (Max): | 500nA |
| Nuværende - Samler (Ic) (Max): | 100mA, 500mA |
| Email: | [email protected] |
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