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Vgs (th) (Max) @ Id: | 4.5V @ 600µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | IPAK (TO-251) |
Serie: | SuperFET® II |
Rds On (Max) @ Id, Vgs: | 850 mOhm @ 3A, 10V |
Power Dissipation (Max): | 75W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 9 Weeks |
Producentens varenummer: | FCU850N80Z |
Inputkapacitans (Ciss) (Max) @ Vds: | 1315pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 800V 6A (Tc) 75W (Tc) Through Hole IPAK (TO-251) |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 800V |
Beskrivelse: | MOSFET N-CH 800V 6A IPAK |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A (Tc) |
Email: | [email protected] |