Købe FJN3303RTA med BYCHPS
Køb med garanti
Spænding - Samler Emitter Opdeling (Max): | 50V |
---|---|
Vce Mætning (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Transistor Type: | NPN - Pre-Biased |
Leverandør Device Package: | TO-92-3 |
Serie: | - |
Modstand - Emitterbase (R2) (Ohm): | 22k |
Modstand - Base (R1) (Ohms): | 22k |
Strøm - Max: | 300mW |
Emballage: | Tape & Box (TB) |
Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andre navne: | FJN3303RTA-ND FJN3303RTATB |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 6 Weeks |
Producentens varenummer: | FJN3303RTA |
Frekvens - Overgang: | 250MHz |
Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3 |
Beskrivelse: | TRANS PREBIAS NPN 300MW TO92-3 |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
Nuværende - Collector Cutoff (Max): | 100nA (ICBO) |
Nuværende - Samler (Ic) (Max): | 100mA |
Email: | [email protected] |