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FJN3312RTA
- Varenummer:
- FJN3312RTA
- Fabrikant:
- Fairchild/ON Semiconductor
- Beskrivelse:
- TRANS PREBIAS NPN 300MW TO92-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19568 Pieces
- Datablad:
- FJN3312RTA.pdf
Introduktion
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specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 40V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 300mV @ 1mA, 10mA |
| Transistor Type: | NPN - Pre-Biased |
| Leverandør Device Package: | TO-92-3 |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | - |
| Modstand - Base (R1) (Ohms): | 47k |
| Strøm - Max: | 300mW |
| Emballage: | Tape & Box (TB) |
| Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | FJN3312RTA |
| Frekvens - Overgang: | 250MHz |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92-3 |
| Beskrivelse: | TRANS PREBIAS NPN 300MW TO92-3 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 1mA, 5V |
| Nuværende - Collector Cutoff (Max): | 100nA (ICBO) |
| Nuværende - Samler (Ic) (Max): | 100mA |
| Email: | [email protected] |
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