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FQA6N90C_F109
- Varenummer:
- FQA6N90C_F109
- Fabrikant:
- Fairchild/ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 900V 6A TO-3P
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18792 Pieces
- Datablad:
- FQA6N90C_F109.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for FQA6N90C_F109, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til FQA6N90C_F109 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-3PN |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 2.3 Ohm @ 3A, 10V |
| Power Dissipation (Max): | 198W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-3P-3, SC-65-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | FQA6N90C_F109 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1770pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 900V 6A (Tc) 198W (Tc) Through Hole TO-3PN |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 900V |
| Beskrivelse: | MOSFET N-CH 900V 6A TO-3P |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A (Tc) |
| Email: | [email protected] |
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