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FQA8N80C_F109
- Varenummer:
- FQA8N80C_F109
- Fabrikant:
- Fairchild/ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 800V 8.4A TO-3P
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19268 Pieces
- Datablad:
- FQA8N80C_F109.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-3PN |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 1.55 Ohm @ 4.2A, 10V |
| Power Dissipation (Max): | 220W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-3P-3, SC-65-3 |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | FQA8N80C_F109 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2050pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 8.4A (Tc) 220W (Tc) Through Hole TO-3PN |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 8.4A TO-3P |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8.4A (Tc) |
| Email: | [email protected] |
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