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Vgs (th) (Max) @ Id: | 5V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | D²PAK (TO-263AB) |
Serie: | QFET® |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 3.3A, 10V |
Power Dissipation (Max): | 3.13W (Ta), 167W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | FQB7N80TM_AM002 |
Inputkapacitans (Ciss) (Max) @ Vds: | 1850pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 52nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Surface Mount D²PAK (TO-263AB) |
Afløb til Source Voltage (VDSS): | 800V |
Beskrivelse: | MOSFET N-CH 800V 6.6A D2PAK |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6.6A (Tc) |
Email: | [email protected] |