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FQD19N10LTM
- Varenummer:
- FQD19N10LTM
- Fabrikant:
- Fairchild/ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 100V 15.6A DPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14816 Pieces
- Datablad:
- 1.FQD19N10LTM.pdf2.FQD19N10LTM.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for FQD19N10LTM, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til FQD19N10LTM via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2V @ 250µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | D-Pak |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 7.8A, 10V |
| Power Dissipation (Max): | 2.5W (Ta), 50W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | FQD19N10LTM-ND FQD19N10LTMTR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Producentens varenummer: | FQD19N10LTM |
| Inputkapacitans (Ciss) (Max) @ Vds: | 870pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak |
| Drevspænding (Maks. Rds On, Min Rds On): | 5V, 10V |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 15.6A DPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 15.6A (Tc) |
| Email: | [email protected] |
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