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FQI8P10TU
- Varenummer:
- FQI8P10TU
- Fabrikant:
- Fairchild/ON Semiconductor
- Beskrivelse:
- MOSFET P-CH 100V 8A I2PAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17218 Pieces
- Datablad:
- FQI8P10TU.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for FQI8P10TU, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til FQI8P10TU via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I2PAK (TO-262) |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 530 mOhm @ 4A, 10V |
| Power Dissipation (Max): | 3.75W (Ta), 65W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | FQI8P10TU |
| Inputkapacitans (Ciss) (Max) @ Vds: | 470pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
| FET Type: | P-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | P-Channel 100V 8A (Tc) 3.75W (Ta), 65W (Tc) Through Hole I2PAK (TO-262) |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET P-CH 100V 8A I2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8A (Tc) |
| Email: | [email protected] |
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