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Vgs (th) (Max) @ Id: | 2V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | I2PAK (TO-262) |
Serie: | QFET® |
Rds On (Max) @ Id, Vgs: | 210 mOhm @ 4.65A, 10V |
Power Dissipation (Max): | 3.75W (Ta), 40W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | FQI9N08LTU |
Inputkapacitans (Ciss) (Max) @ Vds: | 280pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 6.1nC @ 5V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 80V 9.3A (Tc) 3.75W (Ta), 40W (Tc) Through Hole I2PAK (TO-262) |
Afløb til Source Voltage (VDSS): | 80V |
Beskrivelse: | MOSFET N-CH 80V 9.3A I2PAK |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9.3A (Tc) |
Email: | [email protected] |