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Vgs (th) (Max) @ Id: | 4V @ 250µA |
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Vgs (Max): | ±30V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-92-3 |
Serie: | QFET® |
Rds On (Max) @ Id, Vgs: | 11.5 Ohm @ 150mA, 10V |
Power Dissipation (Max): | 1W (Ta), 3W (Tc) |
Emballage: | Cut Tape (CT) |
Pakke / tilfælde: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Andre navne: | FQN1N60CTACT |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 6 Weeks |
Producentens varenummer: | FQN1N60CTA |
Inputkapacitans (Ciss) (Max) @ Vds: | 170pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 600V 300mA (Tc) 1W (Ta), 3W (Tc) Through Hole TO-92-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 600V |
Beskrivelse: | MOSFET N-CH 600V 300MA TO-92 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 300mA (Tc) |
Email: | [email protected] |