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Vgs (th) (Max) @ Id: | 5V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220F |
Serie: | QFET® |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 5.9A, 10V |
Power Dissipation (Max): | 50W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | FQPF19N20T |
Inputkapacitans (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 100V 11.8A (Tc) 50W (Tc) Through Hole TO-220F |
Afløb til Source Voltage (VDSS): | 100V |
Beskrivelse: | MOSFET N-CH 100V 11.8A TO-220F |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 11.8A (Tc) |
Email: | [email protected] |