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Vgs (th) (Max) @ Id: | 4V @ 250µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | TO-220F-3 (Y-Forming) |
Serie: | QFET® |
Rds On (Max) @ Id, Vgs: | 2.5 Ohm @ 2.25A, 10V |
Power Dissipation (Max): | 33W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack, Formed Leads |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | FQPF5N60CYDTU |
Inputkapacitans (Ciss) (Max) @ Vds: | 670pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 600V 4.5A (Tc) 33W (Tc) Through Hole TO-220F-3 (Y-Forming) |
Afløb til Source Voltage (VDSS): | 600V |
Beskrivelse: | MOSFET N-CH 600V 4.5A TO-220F |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4.5A (Tc) |
Email: | [email protected] |