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		| Vgs (th) (Max) @ Id: | 4V @ 250µA | 
|---|---|
| Vgs (Max): | ±30V | 
| Teknologi: | MOSFET (Metal Oxide) | 
| Leverandør Device Package: | TO-220F-3 (Y-Forming) | 
| Serie: | QFET® | 
| Rds On (Max) @ Id, Vgs: | 430 mOhm @ 4.4A, 10V | 
| Power Dissipation (Max): | 38W (Tc) | 
| Emballage: | Tube | 
| Pakke / tilfælde: | TO-220-3 Full Pack, Formed Leads | 
| Driftstemperatur: | -55°C ~ 150°C (TJ) | 
| Monteringstype: | Through Hole | 
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) | 
| Fabrikantens standard ledetid: | 11 Weeks | 
| Producentens varenummer: | FQPF9N25CYDTU | 
| Inputkapacitans (Ciss) (Max) @ Vds: | 710pF @ 25V | 
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V | 
| FET Type: | N-Channel | 
| FET-funktion: | - | 
| Udvidet beskrivelse: | N-Channel 250V 8.8A (Tc) 38W (Tc) Through Hole TO-220F-3 (Y-Forming) | 
| Drevspænding (Maks. Rds On, Min Rds On): | 10V | 
| Afløb til Source Voltage (VDSS): | 250V | 
| Beskrivelse: | MOSFET N-CH 250V 8.8A TO-220F | 
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 8.8A (Tc) | 
| Email: | [email protected] |