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FQT1N80TF_WS
- Varenummer:
- FQT1N80TF_WS
- Fabrikant:
- Fairchild/ON Semiconductor
- Beskrivelse:
- MOSFET N-CH 800V 0.2A SOT-223
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13245 Pieces
- Datablad:
- 1.FQT1N80TF_WS.pdf2.FQT1N80TF_WS.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for FQT1N80TF_WS, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til FQT1N80TF_WS via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Vgs (Max): | ±30V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | SOT-223-3 |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 20 Ohm @ 100mA, 10V |
| Power Dissipation (Max): | 2.1W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-261-4, TO-261AA |
| Andre navne: | FQT1N80TF_WSTR FQT1N80TFWS |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 6 Weeks |
| Producentens varenummer: | FQT1N80TF_WS |
| Inputkapacitans (Ciss) (Max) @ Vds: | 195pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 7.2nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 0.2A SOT-223 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 200mA (Tc) |
| Email: | [email protected] |
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