Købe FQU10N20TU_AM002 med BYCHPS
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| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I-Pak |
| Serie: | QFET® |
| Rds On (Max) @ Id, Vgs: | 360 mOhm @ 3.8A, 10V |
| Power Dissipation (Max): | 2.5W (Ta), 51W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
| Driftstemperatur: | - |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | FQU10N20TU_AM002 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 670pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 200V 7.6A (Tc) 2.5W (Ta), 51W (Tc) Through Hole I-Pak |
| Afløb til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 7.6A IPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.6A (Tc) |
| Email: | [email protected] |