Købe GA10SICP12-263 med BYCHPS
Køb med garanti
GA10SICP12-263
- Varenummer:
- GA10SICP12-263
- Fabrikant:
- GeneSiC Semiconductor
- Beskrivelse:
- TRANS SJT 1200V 25A TO263-7
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15225 Pieces
- Datablad:
- GA10SICP12-263.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for GA10SICP12-263, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til GA10SICP12-263 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | - |
|---|---|
| Vgs (Max): | 3.5V |
| Teknologi: | SiC (Silicon Carbide Junction Transistor) |
| Leverandør Device Package: | D2PAK (7-Lead) |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 100 mOhm @ 10A |
| Power Dissipation (Max): | 170W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Andre navne: | 1242-1318 GA10SICP12-263-ND |
| Driftstemperatur: | 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 18 Weeks |
| Producentens varenummer: | GA10SICP12-263 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1403pF @ 800V |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| FET Type: | - |
| FET-funktion: | - |
| Udvidet beskrivelse: | 1200V (1.2kV) 25A (Tc) 170W (Tc) Surface Mount D2PAK (7-Lead) |
| Drevspænding (Maks. Rds On, Min Rds On): | - |
| Afløb til Source Voltage (VDSS): | 1200V (1.2kV) |
| Beskrivelse: | TRANS SJT 1200V 25A TO263-7 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 25A (Tc) |
| Email: | [email protected] |
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