Købe GP1M006A065F med BYCHPS
Køb med garanti
GP1M006A065F
- Varenummer:
- GP1M006A065F
- Fabrikant:
- Global Power Technologies Group
- Beskrivelse:
- MOSFET N-CH 650V 5.5A TO220F
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19600 Pieces
- Datablad:
- GP1M006A065F.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for GP1M006A065F, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til GP1M006A065F via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220F |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 1.6 Ohm @ 2.75A, 10V |
| Power Dissipation (Max): | 39W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-220-3 Full Pack |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | GP1M006A065F |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1177pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 17nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 650V 5.5A (Tc) 39W (Tc) Through Hole TO-220F |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET N-CH 650V 5.5A TO220F |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 5.5A (Tc) |
| Email: | [email protected] |
Relaterede dele til GP1M006A065F
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
GP1M006A065FH | Global Power Technologies Group | MOSFET N-CH 650V 5.5A TO220F | Forespørgsel |
 |
GP1M006A065PH | Global Power Technologies Group | MOSFET N-CH 650V 5.5A IPAK | Forespørgsel |
 |
GP1M005A050CH | Global Power Technologies Group | MOSFET N-CH 500V 4.5A DPAK | Forespørgsel |
|
GP1M006A065CH | Global Power Technologies Group | MOSFET N-CH 650V 5.5A DPAK | Forespørgsel |
 |
GP1M009A020HG | Global Power Technologies Group | MOSFET N-CH 200V 9A TO220 | Forespørgsel |
|
GP1M006A070F | Global Power Technologies Group | MOSFET N-CH 700V 5A TO220F | Forespørgsel |
|
GP1M006A070FH | Global Power Technologies Group | MOSFET N-CH 700V 5A TO220F | Forespørgsel |
|
GP1M008A050PG | Global Power Technologies Group | MOSFET N-CH 500V 8A IPAK | Forespørgsel |
|
GP1M005A050HS | Global Power Technologies Group | MOSFET N-CH 500V 4A TO220 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog