Købe GP1M009A020PG med BYCHPS
Køb med garanti
GP1M009A020PG
- Varenummer:
- GP1M009A020PG
- Fabrikant:
- Global Power Technologies Group
- Beskrivelse:
- MOSFET N-CH 200V 9A IPAK
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 12381 Pieces
- Datablad:
- GP1M009A020PG.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for GP1M009A020PG, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til GP1M009A020PG via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 5V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | I-Pak |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 400 mOhm @ 4.5A, 10V |
| Power Dissipation (Max): | 52W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-251-3 Short Leads, IPak, TO-251AA |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | GP1M009A020PG |
| Inputkapacitans (Ciss) (Max) @ Vds: | 414pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.6nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 200V 9A (Tc) 52W (Tc) Through Hole I-Pak |
| Afløb til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 9A IPAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9A (Tc) |
| Email: | [email protected] |
Relaterede dele til GP1M009A020PG
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
GP1M009A020FG | Global Power Technologies Group | MOSFET N-CH 200V 9A TO220F | Forespørgsel |
 |
GP1M009A020CG | Global Power Technologies Group | MOSFET N-CH 200V 9A DPAK | Forespørgsel |
|
GP1M009A050FSH | Global Power Technologies Group | MOSFET N-CH 500V 8.5A TO220F | Forespørgsel |
 |
GP1M009A020HG | Global Power Technologies Group | MOSFET N-CH 200V 9A TO220 | Forespørgsel |
|
GP1M009A090FH | Global Power Technologies Group | MOSFET N-CH 900V 9A TO220F | Forespørgsel |
|
GP1M009A090H | Global Power Technologies Group | MOSFET N-CH 900V 9A TO220 | Forespørgsel |
|
GP1M009A060FH | Global Power Technologies Group | MOSFET N-CH 600V 9A TO220F | Forespørgsel |
|
GP1M009A050HS | Global Power Technologies Group | MOSFET N-CH 500V 8.5A TO220 | Forespørgsel |
 |
GP1M009A090N | Global Power Technologies Group | MOSFET N-CH 900V 9.5A TO3PN | Forespørgsel |
|
GP1M009A060H | Global Power Technologies Group | MOSFET N-CH 600V 9A TO220 | Forespørgsel |
|
GP1M009A070F | Global Power Technologies Group | MOSFET N-CH 700V 9A TO220F | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog