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GP1M010A080H
- Varenummer:
- GP1M010A080H
- Fabrikant:
- Global Power Technologies Group
- Beskrivelse:
- MOSFET N-CH 800V 9.5A TO220
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14280 Pieces
- Datablad:
- GP1M010A080H.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for GP1M010A080H, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til GP1M010A080H via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 250µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-220 |
| Serie: | - |
| Rds On (Max) @ Id, Vgs: | 1.05 Ohm @ 4.75A, 10V |
| Power Dissipation (Max): | 290W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 |
| Andre navne: | 1560-1177-1 1560-1177-1-ND |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | GP1M010A080H |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2336pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 53nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 800V 9.5A (Tc) 290W (Tc) Through Hole TO-220 |
| Afløb til Source Voltage (VDSS): | 800V |
| Beskrivelse: | MOSFET N-CH 800V 9.5A TO220 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 9.5A (Tc) |
| Email: | [email protected] |
Relaterede dele til GP1M010A080H
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
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GP1M010A080FH | Global Power Technologies Group | MOSFET N-CH 800V 9.5A TO220F | Forespørgsel |
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GP1M010A060FH | Global Power Technologies Group | MOSFET N-CH 600V 10A TO220F | Forespørgsel |
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