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HN3C10FUTE85LF
- Varenummer:
- HN3C10FUTE85LF
- Fabrikant:
- Toshiba Semiconductor
- Beskrivelse:
- TRANSISTOR NPN US6
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19432 Pieces
- Datablad:
- HN3C10FUTE85LF.pdf
Introduktion
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specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 12V |
|---|---|
| Transistor Type: | 2 NPN (Dual) |
| Leverandør Device Package: | US6 |
| Serie: | - |
| Strøm - Max: | 200mW |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | 6-TSSOP, SC-88, SOT-363 |
| Andre navne: | HN3C10FUTE85LFCT |
| Driftstemperatur: | - |
| Støjbillede (dB Typ @ f): | 1.1dB @ 1GHz |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | HN3C10FUTE85LF |
| Gevinst: | 11.5dB |
| Frekvens - Overgang: | 7GHz |
| Udvidet beskrivelse: | RF Transistor 2 NPN (Dual) 12V 80mA 7GHz 200mW Surface Mount US6 |
| Beskrivelse: | TRANSISTOR NPN US6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 20mA, 10V |
| Nuværende - Samler (Ic) (Max): | 80mA |
| Email: | [email protected] |
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