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IDH04G65C5XKSA1
- Varenummer:
- IDH04G65C5XKSA1
- Beskrivelse:
- DIODE SCHOTTKY 650V 4A TO220-2
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14102 Pieces
- Datablad:
- IDH04G65C5XKSA1.pdf
Introduktion
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specifikationer
| Spænding - Videresend (Vf) (Max) @ Hvis: | 1.7V @ 4A |
|---|---|
| Spænding - DC-omvendt (Vr) (Max): | 650V |
| Leverandør Device Package: | PG-TO220-2 |
| Fart: | No Recovery Time > 500mA (Io) |
| Serie: | thinQ!™ |
| Reverse Recovery Time (trr): | 0ns |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-2 |
| Andre navne: | IDH04G65C5 IDH04G65C5-ND SP000925198 |
| Driftstemperatur - Junction: | -55°C ~ 175°C |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IDH04G65C5XKSA1 |
| Udvidet beskrivelse: | Diode Silicon Carbide Schottky 650V 4A (DC) Through Hole PG-TO220-2 |
| Diodetype: | Silicon Carbide Schottky |
| Beskrivelse: | DIODE SCHOTTKY 650V 4A TO220-2 |
| Nuværende - Reverse Lækage @ Vr: | 140µA @ 650V |
| Nuværende - Gennemsnitlig Rectified (Io): | 4A (DC) |
| Kapacitans @ Vr, F: | 130pF @ 1V, 1MHz |
| Email: | [email protected] |
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