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IMD2AT108
- Varenummer:
- IMD2AT108
- Fabrikant:
- LAPIS Semiconductor
- Beskrivelse:
- TRANS NPN/PNP PREBIAS 0.3W SMT6
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19458 Pieces
- Datablad:
- IMD2AT108.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IMD2AT108, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IMD2AT108 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Spænding - Samler Emitter Opdeling (Max): | 50V |
|---|---|
| Vce Mætning (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
| Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Leverandør Device Package: | SMT6 |
| Serie: | - |
| Modstand - Emitterbase (R2) (Ohm): | 22k |
| Modstand - Base (R1) (Ohms): | 22k |
| Strøm - Max: | 300mW |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | SC-74, SOT-457 |
| Andre navne: | IMD2AT108DKR |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 10 Weeks |
| Producentens varenummer: | IMD2AT108 |
| Frekvens - Overgang: | 250MHz |
| Udvidet beskrivelse: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 300mW Surface Mount SMT6 |
| Beskrivelse: | TRANS NPN/PNP PREBIAS 0.3W SMT6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 56 @ 5mA, 5V |
| Nuværende - Collector Cutoff (Max): | 500nA |
| Nuværende - Samler (Ic) (Max): | 100mA |
| Email: | [email protected] |
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|---|---|---|---|---|
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RN1911FETE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Forespørgsel |
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