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Vgs (th) (Max) @ Id: | 3.5V @ 150µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO-220-FP |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 650 mOhm @ 1.8A, 13V |
Power Dissipation (Max): | 27.2W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-220-3 Full Pack |
Andre navne: | IPA50R650CEXKSA1 SP000992086 |
Driftstemperatur: | -40°C ~ 150°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPA50R650CE |
Inputkapacitans (Ciss) (Max) @ Vds: | 342pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | Super Junction |
Udvidet beskrivelse: | N-Channel 500V 6.1A (Tc) 27.2W (Tc) Through Hole PG-TO-220-FP |
Afløb til Source Voltage (VDSS): | 500V |
Beskrivelse: | MOSFET N-CH 500V 6.1A TO220FP |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6.1A (Tc) |
Email: | [email protected] |