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IPAN65R650CEXKSA1
- Varenummer:
- IPAN65R650CEXKSA1
- Beskrivelse:
- MOSFET NCH 650V 10.1A TO220-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16084 Pieces
- Datablad:
- IPAN65R650CEXKSA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 210µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO220 Full Pack |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 2.1A, 10V |
| Power Dissipation (Max): | 28W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-220-3 Full Pack |
| Andre navne: | SP001508828 |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | IPAN65R650CEXKSA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | Super Junction |
| Udvidet beskrivelse: | N-Channel 650V 10.1A (Tc) 28W (Tc) Through Hole PG-TO220 Full Pack |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 650V |
| Beskrivelse: | MOSFET NCH 650V 10.1A TO220-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 10.1A (Tc) |
| Email: | [email protected] |
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