Købe IPB06N03LB med BYCHPS
Køb med garanti
IPB06N03LB
- Varenummer:
- IPB06N03LB
- Beskrivelse:
- MOSFET N-CH 30V 50A D2PAK
- Blyfri Status / RoHS Status:
- Indeholder bly / RoHS ikke-kompatibel
- Tilgængelig mængde:
- 18505 Pieces
- Datablad:
- IPB06N03LB.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPB06N03LB, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPB06N03LB via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2V @ 40µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | P-TO263-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 50A, 10V |
| Power Dissipation (Max): | 83W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | IPB06N03LBT SP000065274 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPB06N03LB |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2782pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 5V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 30V 50A (Tc) 83W (Tc) Surface Mount P-TO263-3 |
| Afløb til Source Voltage (VDSS): | 30V |
| Beskrivelse: | MOSFET N-CH 30V 50A D2PAK |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 50A (Tc) |
| Email: | [email protected] |
Relaterede dele til IPB06N03LB
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
IPB06N03LA G | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Forespørgsel |
|
IPB065N03L G | Infineon Technologies | MOSFET N-CH 30V 50A TO-263-3 | Forespørgsel |
 |
RFD14N05 | Fairchild/ON Semiconductor | MOSFET N-CH 50V 14A I-PAK | Forespørgsel |
|
IPB06N03LAT | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Forespørgsel |
 |
IPB065N15N3 G | Infineon Technologies | MOSFET N-CH 150V 130A TO263-7 | Forespørgsel |
|
IPB06N03LB G | Infineon Technologies | MOSFET N-CH 30V 50A D2PAK | Forespørgsel |
|
IPB065N15N3GE8187ATMA1 | Infineon Technologies | MOSFET N-CH 150V 130A TO263-7 | Forespørgsel |
|
IPB06N03LA | Infineon Technologies | MOSFET N-CH 25V 50A D2PAK | Forespørgsel |
|
IPB065N06L G | Infineon Technologies | MOSFET N-CH 60V 80A D2PAK | Forespørgsel |
|
IPB067N08N3 G | Infineon Technologies | MOSFET N-CH 80V 80A TO263-3 | Forespørgsel |
|
IPB065N10N3GATMA1 | Infineon Technologies | MOSFET N-CH TO263-3 | Forespørgsel |
|
IPB06CN10N G | Infineon Technologies | MOSFET N-CH 100V 100A TO263-3 | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers
- Texas Instruments names Haviv Ilan senior vice president of High Performance Analog