Købe IPB110N06L G med BYCHPS
Køb med garanti
| Vgs (th) (Max) @ Id: | 2V @ 94µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO263-3-2 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 11 mOhm @ 78A, 10V |
| Power Dissipation (Max): | 158W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | IPB110N06LGINDKR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPB110N06L G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2700pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 79nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 60V 78A (Tc) 158W (Tc) Surface Mount PG-TO263-3-2 |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET N-CH 60V 78A TO-263 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 78A (Tc) |
| Email: | [email protected] |