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Vgs (th) (Max) @ Id: | 4V @ 150µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO263-7-3 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.1 mOhm @ 80A, 10V |
Power Dissipation (Max): | 214W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
Andre navne: | IPB160N04S3-H2 IPB160N04S3-H2-ND IPB160N04S3-H2TR IPB160N04S3-H2TR-ND IPB160N04S3H2 SP000254818 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPB160N04S3H2ATMA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 9600pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 145nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 40V 160A (Tc) 214W (Tc) Surface Mount PG-TO263-7-3 |
Afløb til Source Voltage (VDSS): | 40V |
Beskrivelse: | MOSFET N-CH 40V 160A TO263-7 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 160A (Tc) |
Email: | [email protected] |