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Vgs (th) (Max) @ Id: | 4.5V @ 200µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO263 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 660 mOhm @ 2.1A, 10V |
Power Dissipation (Max): | 62.5W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Andre navne: | IPB65R660CFD-ND IPB65R660CFDATMA1 SP000861698 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 16 Weeks |
Producentens varenummer: | IPB65R660CFD |
Inputkapacitans (Ciss) (Max) @ Vds: | 615pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 650V 6A (Tc) 62.5W (Tc) Surface Mount PG-TO263 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 650V |
Beskrivelse: | MOSFET N-CH 650V 6A TO263 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 6A (Tc) |
Email: | [email protected] |