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Vgs (th) (Max) @ Id: | 4V @ 52µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO263-3-2 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 5.4 mOhm @ 80A, 10V |
Power Dissipation (Max): | 100W (Tc) |
Emballage: | Cut Tape (CT) |
Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Andre navne: | IPB80N04S3-06CT IPB80N04S3-06CT-ND |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPB80N04S3-06 |
Inputkapacitans (Ciss) (Max) @ Vds: | 3250pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 47nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 40V 80A (Tc) 100W (Tc) Surface Mount PG-TO263-3-2 |
Afløb til Source Voltage (VDSS): | 40V |
Beskrivelse: | MOSFET N-CH 40V 80A TO263-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) |
Email: | [email protected] |