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IPB80N06S209ATMA1
- Varenummer:
- IPB80N06S209ATMA1
- Beskrivelse:
- MOSFET N-CH 55V 80A TO263-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18832 Pieces
- Datablad:
- IPB80N06S209ATMA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 125µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO263-3-2 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.8 mOhm @ 50A, 10V |
| Power Dissipation (Max): | 190W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Andre navne: | IPB80N06S2-09 IPB80N06S2-09-ND SP000218741 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPB80N06S209ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2360pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 80nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 55V 80A (Tc) 190W (Tc) Surface Mount PG-TO263-3-2 |
| Afløb til Source Voltage (VDSS): | 55V |
| Beskrivelse: | MOSFET N-CH 55V 80A TO263-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 80A (Tc) |
| Email: | [email protected] |
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