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IPD122N10N3GBTMA1
- Varenummer:
- IPD122N10N3GBTMA1
- Beskrivelse:
- MOSFET N-CH 100V 59A TO252-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 17723 Pieces
- Datablad:
- IPD122N10N3GBTMA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 46µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 12.2 mOhm @ 46A, 10V |
| Power Dissipation (Max): | 94W (Tc) |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD122N10N3 G IPD122N10N3 G-ND IPD122N10N3 GTR-ND IPD122N10N3G SP000485966 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPD122N10N3GBTMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2500pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 59A (Tc) 94W (Tc) Surface Mount PG-TO252-3 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 59A TO252-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 59A (Tc) |
| Email: | [email protected] |
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