Købe IPD135N08N3GATMA1 med BYCHPS
Køb med garanti
IPD135N08N3GATMA1
- Varenummer:
- IPD135N08N3GATMA1
- Beskrivelse:
- MOSFET N-CH 80V 45A
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 14786 Pieces
- Datablad:
- IPD135N08N3GATMA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPD135N08N3GATMA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPD135N08N3GATMA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 33µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 13.5 mOhm @ 45A, 10V |
| Power Dissipation (Max): | 79W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD135N08N3GATMA1DKR |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 14 Weeks |
| Producentens varenummer: | IPD135N08N3GATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1730pF @ 40V |
| Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 80V 45A (Tc) 79W (Tc) PG-TO252-3 |
| Afløb til Source Voltage (VDSS): | 80V |
| Beskrivelse: | MOSFET N-CH 80V 45A |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 45A (Tc) |
| Email: | [email protected] |
Relaterede dele til IPD135N08N3GATMA1
| Billede | Varenummer | producenter | Beskrivelse | Udsigt |
|---|---|---|---|---|
 |
IPD135N03LGXT | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Forespørgsel |
 |
FDA2712 | Fairchild/ON Semiconductor | MOSFET N-CH 250V 64A TO-3PN | Forespørgsel |
 |
IPD135N03LGBTMA1 | Infineon Technologies | LV POWER MOS | Forespørgsel |
|
IPD135N08N3GBTMA1 | Infineon Technologies | MOSFET N-CH 80V 45A TO252-3 | Forespørgsel |
|
IPD13N03LA G | Infineon Technologies | MOSFET N-CH 25V 30A DPAK | Forespørgsel |
 |
IRFU120PBF | Vishay Siliconix | MOSFET N-CH 100V 7.7A I-PAK | Forespørgsel |
 |
IRF3315STRR | Infineon Technologies | MOSFET N-CH 150V 21A D2PAK | Forespørgsel |
 |
GP1M011A050H | Global Power Technologies Group | MOSFET N-CH 500V 11A TO220 | Forespørgsel |
|
IPD135N03L G | Infineon Technologies | MOSFET N-CH 30V 30A TO252-3 | Forespørgsel |
|
STB80NE03L-06T4 | STMicroelectronics | MOSFET N-CH 30V 80A D2PAK | Forespørgsel |
Laast News
- Xilinx Ships Industry's First 16nm All Programmable MPSoC Ahead of Schedule
- Xilinx and Samsung Jointly Enable the World's First 5G NR Commercial Deployment
- TI to reduce costs in Wireless business; OMAP™ processors and wireless connectivity solutions will focus on embedded markets
- TI's Peter Balyta to head Education Technology division; Melendy Lovett to retire
- Janet Clark to join TI board of directors
- TI unveils DLP® 0.66-inch 4K ultra-high definition (UHD) chip, enabling more affordable large screen projection displays for home, business and education
- GCHQ Director calls for international cyber pact
- Embedded World: Arm introduces fourth security element to PSA
- Last chance: Nominate BrightSparks before 28 February
- Embedded World 2019: Get the full Electronics Weekly Guide
- "Xcell Journal" Special Edition: Xilinx Customers Shape a Brilliant Future
- Xilinx Launches Public Access of the SDSoC Development Environment to Expand Zynq SoC User Base to Broad Community of Systems and Software Engineers