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IPD320N20N3GBTMA1
- Varenummer:
- IPD320N20N3GBTMA1
- Beskrivelse:
- MOSFET N-CH 200V 34A TO252-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 16015 Pieces
- Datablad:
- IPD320N20N3GBTMA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 90µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 32 mOhm @ 34A, 10V |
| Power Dissipation (Max): | 136W (Tc) |
| Emballage: | Cut Tape (CT) |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD320N20N3 GCT IPD320N20N3 GCT-ND |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPD320N20N3GBTMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 2350pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 200V 34A (Tc) 136W (Tc) Surface Mount PG-TO252-3 |
| Afløb til Source Voltage (VDSS): | 200V |
| Beskrivelse: | MOSFET N-CH 200V 34A TO252-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 34A (Tc) |
| Email: | [email protected] |
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