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Vgs (th) (Max) @ Id: | 2.4V @ 39µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO252-3-11 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 24 mOhm @ 35A, 10V |
Power Dissipation (Max): | 71W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andre navne: | IPD35N10S3L-26 IPD35N10S3L-26-ND IPD35N10S3L26ATMA1TR SP000386184 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 26 Weeks |
Producentens varenummer: | IPD35N10S3L26ATMA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 2700pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 100V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3-11 |
Drevspænding (Maks. Rds On, Min Rds On): | 4.5V, 10V |
Afløb til Source Voltage (VDSS): | 100V |
Beskrivelse: | MOSFET N-CH 100V 35A TO252-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 35A (Tc) |
Email: | [email protected] |