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Vgs (th) (Max) @ Id: | 2.2V @ 20µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO252-3-11 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 50A, 10V |
Power Dissipation (Max): | 50W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andre navne: | IPD50N06S4L-12 IPD50N06S4L-12-ND IPD50N06S4L12ATMA1TR IPD50N06S4L12DTMA1 SP000476422 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPD50N06S4L12ATMA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 2890pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 60V 50A (Tc) 50W (Tc) Surface Mount PG-TO252-3-11 |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET N-CH 60V 50A TO252-3-11 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 50A (Tc) |
Email: | [email protected] |