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		| Vgs (th) (Max) @ Id: | 3.5V @ 350µA | 
|---|---|
| Vgs (Max): | ±20V | 
| Teknologi: | MOSFET (Metal Oxide) | 
| Leverandør Device Package: | PG-TO252-3 | 
| Serie: | CoolMOS™ CE | 
| Rds On (Max) @ Id, Vgs: | 280 mOhm @ 4.2A, 13V | 
| Power Dissipation (Max): | 119W (Tc) | 
| Emballage: | Tape & Reel (TR) | 
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 | 
| Andre navne: | IPD50R280CEATMA1-ND  IPD50R280CEATMA1TR SP001117680  | 
| Driftstemperatur: | -55°C ~ 150°C (TJ) | 
| Monteringstype: | Surface Mount | 
| Fugtfølsomhedsniveau (MSL): | 3 (168 Hours) | 
| Producentens varenummer: | IPD50R280CEATMA1 | 
| Inputkapacitans (Ciss) (Max) @ Vds: | 773pF @ 100V | 
| Gate Charge (Qg) (Max) @ Vgs: | 32.6nC @ 10V | 
| FET Type: | N-Channel | 
| FET-funktion: | - | 
| Udvidet beskrivelse: | N-Channel 500V 13A (Tc) 119W (Tc) Surface Mount PG-TO252-3 | 
| Drevspænding (Maks. Rds On, Min Rds On): | 13V | 
| Afløb til Source Voltage (VDSS): | 500V | 
| Beskrivelse: | MOSFET N-CH 500V 13A PG-TO252 | 
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 13A (Tc) | 
| Email: | [email protected] |