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IPD60R1K4C6
- Varenummer:
- IPD60R1K4C6
- Beskrivelse:
- MOSFET N-CH 600V 3.2A TO252-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 20207 Pieces
- Datablad:
- IPD60R1K4C6.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 90µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO252-3 |
| Serie: | CoolMOS™ |
| Rds On (Max) @ Id, Vgs: | 1.4 Ohm @ 1.1A, 10V |
| Power Dissipation (Max): | 28.4W (Tc) |
| Emballage: | Original-Reel® |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | IPD60R1K4C6DKR |
| Driftstemperatur: | -55°C ~ 150°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPD60R1K4C6 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 200pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.4nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3 |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 3.2A TO252-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 3.2A (Tc) |
| Email: | [email protected] |
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