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IPD60R600E6ATMA1
- Varenummer:
- IPD60R600E6ATMA1
- Beskrivelse:
- MOSFET N-CH 600V 7.3A TO252
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 19065 Pieces
- Datablad:
- IPD60R600E6ATMA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 3.5V @ 200µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | TO-252 |
| Serie: | CoolMOS™ E6 |
| Rds On (Max) @ Id, Vgs: | 600 mOhm @ 2.4A, 10V |
| Power Dissipation (Max): | 63W (Tc) |
| Emballage: | Bulk |
| Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Andre navne: | SP001117094 |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 12 Weeks |
| Producentens varenummer: | IPD60R600E6ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 440pF @ 100V |
| Gate Charge (Qg) (Max) @ Vgs: | 20.5nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 600V 7.3A (Tc) 63W (Tc) Surface Mount TO-252 |
| Afløb til Source Voltage (VDSS): | 600V |
| Beskrivelse: | MOSFET N-CH 600V 7.3A TO252 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 7.3A (Tc) |
| Email: | [email protected] |
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