Købe IPD60R950C6ATMA1 med BYCHPS
Køb med garanti
Vgs (th) (Max) @ Id: | 3.5V @ 130µA |
---|---|
Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO252-3 |
Serie: | CoolMOS™ C6 |
Rds On (Max) @ Id, Vgs: | 950 mOhm @ 1.5A, 10V |
Power Dissipation (Max): | 37W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andre navne: | IPD60R950C6ATMA1-ND IPD60R950C6ATMA1TR SP001117730 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Fabrikantens standard ledetid: | 12 Weeks |
Producentens varenummer: | IPD60R950C6ATMA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 280pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 13nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG-TO252-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 600V |
Beskrivelse: | MOSFET N-CH 600V 4.4A TO252 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 4.4A (Tc) |
Email: | [email protected] |