Købe IPD90R1K2C3BTMA1 med BYCHPS
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Vgs (th) (Max) @ Id: | 3.5V @ 310µA |
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Vgs (Max): | ±20V |
Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO252-3 |
Serie: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 1.2 Ohm @ 2.8A, 10V |
Power Dissipation (Max): | 83W (Tc) |
Emballage: | Tape & Reel (TR) |
Pakke / tilfælde: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Andre navne: | IPD90R1K2C3 IPD90R1K2C3-ND IPD90R1K2C3BTMA1TR IPD90R1K2C3TR-ND SP000413720 |
Driftstemperatur: | -55°C ~ 150°C (TJ) |
Monteringstype: | Surface Mount |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPD90R1K2C3BTMA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 710pF @ 100V |
Gate Charge (Qg) (Max) @ Vgs: | 28nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 900V 5.1A (Tc) 83W (Tc) Surface Mount PG-TO252-3 |
Drevspænding (Maks. Rds On, Min Rds On): | 10V |
Afløb til Source Voltage (VDSS): | 900V |
Beskrivelse: | MOSFET N-CH 900V 5.1A TO-252 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 5.1A (Tc) |
Email: | [email protected] |