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IPG20N10S4L22ATMA1
- Varenummer:
- IPG20N10S4L22ATMA1
- Beskrivelse:
- MOSFET 2N-CH 8TDSON
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 15800 Pieces
- Datablad:
- IPG20N10S4L22ATMA1.pdf
Introduktion
BYCHIPS er strømforsyningsdistributøren for IPG20N10S4L22ATMA1, vi har lagrene til omgående forsendelse og også tilgængelig for lang tid levering. Send venligst din købsplan til IPG20N10S4L22ATMA1 via e-mail, vil vi give dig den bedste pris i henhold til din plan.
specifikationer
| Vgs (th) (Max) @ Id: | 2.1V @ 25µA |
|---|---|
| Leverandør Device Package: | PG-TDSON-8-4 |
| Serie: | Automotive, AEC-Q101, OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 22 mOhm @ 17A, 10V |
| Strøm - Max: | 60W |
| Emballage: | Tape & Reel (TR) |
| Pakke / tilfælde: | 8-PowerVDFN |
| Andre navne: | IPG20N10S4L22ATMA1-ND IPG20N10S4L22ATMA1TR SP000866570 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Surface Mount |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 26 Weeks |
| Producentens varenummer: | IPG20N10S4L22ATMA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 1755pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
| FET Type: | 2 N-Channel (Dual) |
| FET-funktion: | Logic Level Gate |
| Udvidet beskrivelse: | Mosfet Array 2 N-Channel (Dual) 100V 20A 60W Surface Mount PG-TDSON-8-4 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET 2N-CH 8TDSON |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 20A |
| Email: | [email protected] |
Relaterede dele til IPG20N10S4L22ATMA1
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|---|---|---|---|---|
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IPG20N06S2L35AATMA1 | Infineon Technologies | MOSFET 2N-CH 8TDSON | Forespørgsel |
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IPG20N10S4L22AATMA1 | Infineon Technologies | MOSFET 2N-CH 100V 20A TDSON-8 | Forespørgsel |
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