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IPI032N06N3GAKSA1
- Varenummer:
- IPI032N06N3GAKSA1
- Beskrivelse:
- MOSFET N-CH 60V 120A
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 13028 Pieces
- Datablad:
- IPI032N06N3GAKSA1.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 118µA |
|---|---|
| Vgs (Max): | ±20V |
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO262-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 3.2 mOhm @ 100A, 10V |
| Power Dissipation (Max): | 188W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andre navne: | SP000680650 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Fabrikantens standard ledetid: | 14 Weeks |
| Producentens varenummer: | IPI032N06N3GAKSA1 |
| Inputkapacitans (Ciss) (Max) @ Vds: | 13000pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs: | 165nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 60V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3 |
| Drevspænding (Maks. Rds On, Min Rds On): | 10V |
| Afløb til Source Voltage (VDSS): | 60V |
| Beskrivelse: | MOSFET N-CH 60V 120A |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 120A (Tc) |
| Email: | [email protected] |
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