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IPI08CN10N G
- Varenummer:
- IPI08CN10N G
- Beskrivelse:
- MOSFET N-CH 100V 95A TO262-3
- Blyfri Status / RoHS Status:
- Blyfri / RoHS-kompatibel
- Tilgængelig mængde:
- 18068 Pieces
- Datablad:
- IPI08CN10N G.pdf
Introduktion
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specifikationer
| Vgs (th) (Max) @ Id: | 4V @ 130µA |
|---|---|
| Teknologi: | MOSFET (Metal Oxide) |
| Leverandør Device Package: | PG-TO262-3 |
| Serie: | OptiMOS™ |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 95A, 10V |
| Power Dissipation (Max): | 167W (Tc) |
| Emballage: | Tube |
| Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Andre navne: | SP000208926 |
| Driftstemperatur: | -55°C ~ 175°C (TJ) |
| Monteringstype: | Through Hole |
| Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
| Producentens varenummer: | IPI08CN10N G |
| Inputkapacitans (Ciss) (Max) @ Vds: | 6660pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
| FET Type: | N-Channel |
| FET-funktion: | - |
| Udvidet beskrivelse: | N-Channel 100V 95A (Tc) 167W (Tc) Through Hole PG-TO262-3 |
| Afløb til Source Voltage (VDSS): | 100V |
| Beskrivelse: | MOSFET N-CH 100V 95A TO262-3 |
| Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 95A (Tc) |
| Email: | [email protected] |
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