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Vgs (th) (Max) @ Id: | 4V @ 200µA |
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Teknologi: | MOSFET (Metal Oxide) |
Leverandør Device Package: | PG-TO262-3-1 |
Serie: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 2.4 mOhm @ 100A, 10V |
Power Dissipation (Max): | 250W (Tc) |
Emballage: | Tube |
Pakke / tilfælde: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Andre navne: | IPI120N06S4-H1 IPI120N06S4-H1-ND SP000415620 |
Driftstemperatur: | -55°C ~ 175°C (TJ) |
Monteringstype: | Through Hole |
Fugtfølsomhedsniveau (MSL): | 1 (Unlimited) |
Producentens varenummer: | IPI120N06S4H1AKSA1 |
Inputkapacitans (Ciss) (Max) @ Vds: | 21900pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 270nC @ 10V |
FET Type: | N-Channel |
FET-funktion: | - |
Udvidet beskrivelse: | N-Channel 60V 120A (Tc) 250W (Tc) Through Hole PG-TO262-3-1 |
Afløb til Source Voltage (VDSS): | 60V |
Beskrivelse: | MOSFET N-CH 60V 120A TO262-3 |
Strøm - Kontinuerlig afløb (Id) @ 25 ° C: | 120A (Tc) |
Email: | [email protected] |